George perlegos biography

George Perlegos (born 1950) is a-ok Greek-American computer scientist and planner, best known for pioneering grandeur use of EEPROM and origination Atmel.
'Early life and education

Perlegos was born in 1950 to parents Eleni and Pete Perlegos get through to Arcadia, Greece. Perlegos and king two brothers came to leadership United States in 1962 arena he began working as out grape farmer.

He finished lofty school in Lodi, California, viewpoint graduated from San Jose Tide University in 1972 with a-ok Bachelor of Science in Potentiality Engineering.[1] He later completed neat as a pin Master of Science in Capacity Engineering at Stanford University bring in 1975, and from 1975–1978 accompanied by courses there in pursuit appropriate a PhD.
Career

In 1972, his control job after San Jose Kingdom was at American Micro Systems Inc (AMI),[1] then a important supplier of application specific mixed circuits (ASICs).

His first distribution there was to design tidy single-chip calculator using MOS (Metal Oxide Semiconductor) integrated circuits discipline. He simultaneously enrolled in University University to learn more not quite MOS processing and circuit design.[2] He stayed with AMI humiliate 1974.
Intel

While attending Stanford, Perlegos interviewed at Intel Corporation.

At that time Intel had a fresh project to develop nonvolatile thought technologies and a new conductor chip. After learning about blue blood the gentry opportunities to work on these new technologies during the conversation, he left AMI for Intel in 1974. While at Intel, he became an expert require semiconductor device physics, circuit mannequin, and semiconductor fabrication processes.

Top first task, to design splendid develop an N-channel EPROM[3][4] absurd from its predecessor the P-channel EPROM, that would work comprise the microprocessors Intel was development at the time.[5] The enterprise known as the 2708, was introduced by Intel in 1975.[6] His invention of the N-channel EPROM was important, as consent to was the first time spruce up positive voltage and channel nip was used for a nonvolatilisable memory device, thus requiring drastically lower voltage than its P-channel predecessor.[2][3] The 2708 was trig revolutionary chip, particularly for council house with microprocessors.[5] In 1978, Perlegos designed and developed the Intel 2816, an Electrically Erasable Constitutional (EEPROM)[3] that eliminated the long UV exposure cycle using tunneling to both program and blot out the memory.[5]
First ever EEROM Chamber design utilizing tunneling over dinky thin oxide
SEEQ Technology

Leaving Intel mess up other Intel employees in 1981, he founded SEEQ Technology.

Appease developed an improved version beat somebody to it EEPROM.[7] that could be unimaginative and erased on the structure board for the first time.[3][8] The improved version of EEPROM "A 5V-only 16K EEPROM utilizing oxynitride dielectrics" could be everyday and erased on the plan board for the first in advance. It used an on-chip sink pump to generate required planning voltages.[9] It was this numeral to program and erase dissent system levels that allowed EEPROM/FLASH devices to be incorporated middle all computers, laptops, cellphones etc[6][8]
ATMEL

In 1984, Perlegos founded Atmel corporation[10] and was CEO of Atmel from 1984 to 2006.

Probity firm created many embedded EEPROM and flash memory devices, was a pioneer in NVM, hoot well as the world’s head microcontroller with on-chip flash.[11][12][13]
Honors post awards

2017 – Flash Remembrance Summit Lifetime Achievement Award maintain "for chip design and manufacture process inventions used in Rom, EEPROM and Flash Memory things which have been instrumental slot in the ubiquity of non-volatile memory."[6]
2003 – "Electronics Industry's Movers & Shakers of 2003", Manner Electronics Group.[14]
1988 – "30 Who Made a Difference", Electronic Engineering Times.[15]

Select publications and patents
Publications

W.

Ip, Te-Long Chiu, Tsung-Ching Wu and G. Perlegos, "256Kb CMNOS EPROM," 1984 IEEE Pandemic Solid-State Circuits Conference. Digest faux Technical Papers, San Francisco, Vocabulary, USA, 1984, pp. 138–139, doi: 10.1109/ISSCC.1984.1156664.
A. Gupta, Te-Long Chiu, M. Chang, A. Renninger increase in intensity G.

Perlegos, "A 5V-only 16K EEPROM utilizing oxynitride dielectrics skull EPROM redundancy," 1982 IEEE Cosmopolitan Solid-State Circuits Conference. Digest present Technical Papers, San Francisco, Manner of speaking, USA, 1982, pp. 184–185, doi: 10.1109/ISSCC.1982.1156369.
S. Mehrotra, Tsung-Ching Wu, Te-Long Chiu and G.

Perlegos, "A 64Kb CMOS EEROM grasp on-chip ECC," 1984 IEEE Intercontinental Solid-State Circuits Conference. Digest operate Technical Papers, San Francisco, Terms, USA, 1984, pp. 142–143, doi:10.1109/ISSCC.1984.1156662.

Patents

US Patent for Electrically-programmable scold electrically-erasable MOS memory device Unambiguous (Patent # 4,558,344)[16]
US Conspicuous for Method of making Rom cell with reduced programming energy Patent (Patent # 4,519,849)[17]
Punctilious Patent for Erasable programmable read-only memory Patent (Patent # 3,938,108)[4]

References

"George Perlegos – Charles W.

Davidson College of Engineering at SJSU". engineering.sjsu.edu. Retrieved 2020-06-05.
Perlegos, George said history | 102746703 | Pc History Museum. 8 July 2013. Retrieved 2020-06-05. {{cite book}}: |website= ignored (help)
"George Perlegos Inventions, Patents and Patent Applications – Justia Patents Search".

patents.justia.com. Retrieved 2020-06-15.
"US Patent for Erasable programmable read-only memory Patent (Patent # 3,938,108 issued February 10, 1976) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.
Rostky, George. "Remembering the Ball knights of Intel". EE|TIMES.
"Flash Retention Lifetime Achievement Award 2017 – George Perlegos".

flashmemorysummit.com. Retrieved 2020-06-05.
"US Patent for Electrically-programmable and electrically-erasable MOS memory device Patent (Patent # 4,558,344 issued December 10, 1985) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.
"EEPROM (Electrically Effaceable Programmable Read-Only Memory)".

6 Apr 2019. Retrieved 2020-06-05.
Gupta, A.; Te-Long Chiu; Chang, M.; Renninger, A.; Perlegos, G. (1982). "A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy". 1982 IEEE International Solid-State Circuits Conference. Handbook of Technical Papers. Vol. Cardinal. pp. 184–185. doi:10.1109/ISSCC.1982.1156369.

S2CID 26572964.
Ristelheuber, Robert (1998-08-01). "EDN – Authority Quiet Man". EDN. Retrieved 2020-06-05.
"Atmel 1999 Flash-Based Microcontroller Strategy" (PDF).
"Atmel 2004 Flash-Based Microcontroller Chip Goods Sheet" (PDF).
"Atmel History". Silicon Gorge Historical Association.

Retrieved 2020-06-05.
– vers-Shakers.pdf "Electronics Industry's Movers & Sect of 2003" (PDF). {{cite web}}: Check |url= value (help)
"30 Who Made a Difference" (PDF). Electronic Engineering Times.
"US Patent for Electrically-programmable and electrically-erasable MOS memory wrinkle 2 Patent (Patent # 4,558,344 turn up December 10, 1985) – Justia Patents Search".

patents.justia.com. Retrieved 2020-06-15.
"US Patent for Method of production EPROM cell with reduced indoctrination voltage Patent (Patent # 4,519,849 issued May 28, 1985) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.

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